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| TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement-mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -11 -44 1.9 1.0 31.5 -11 0.19 150 -55 to 150 Unit V V V A Pulse (Note 1) JEDEC W W mJ A mJ C C 2-6J1B Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2002-03-25 TPC8111 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit C/W C/W Marking (Note 5) TPC8111 Type Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * on lower left of the marking indicates Pin 1. shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-03-25 TPC8111 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS -10 V 4.7 ID = -5.5 A VOUT RL = 2.7 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -5.5 A VGS = -10 V, ID = -5.5 A VDS = -10 V, ID = -5.5 A Min -30 -15 -0.8 11 VDD -24 V, VGS = 10 V, - ID = -11 A Typ. 12 8.1 23 5710 560 590 18 23 109 396 107 12 20 Max 10 -10 -2.0 18 12 ns nC pF Unit A A V V m S VDD -15 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -11 A, VGS = 0 V Min Typ. Max -44 1.2 Unit A V 3 2002-03-25 TPC8111 ID - VDS -10 -10 -5 -3 -4 -2.5 -2.4 -2.3 -6 -2.2 -4 -2.1 -2 VGS = -2 V Common source Ta = 25C Pulse test -20 -10 -3 -2.7 -5 -4 -12 ID - VDS -2.6 -2.5 Common source Ta = 25C Pulse test -8 -16 (A) (A) ID Drain current Drain current ID -2.4 -2.3 -8 -2.2 -4 VGS = -2.1 V 0 0 -2 -4 -6 -8 -10 0 0 -4 -8 -12 -16 -20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -40 Common source VDS = -10 V Pulse test -0.5 VDS - VGS Common source Ta = 25C Pulse test (V) Drain-source voltage VDS ID (A) -30 -0.4 -0.3 Drain current -20 -0.2 ID = -11 A -0.1 -5.5 -10 25 100 0 0 -1 -2 Ta = -55C -3 -4 -5 0 0 -2.5 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 100 50 Ta = -55C 25 10 5 3 100 RDS (ON) - ID |Yfs| (S) 50 Drain-source ON resistance RDS (ON) (m) 30 30 VGS = -4.5 V 10 5 3 -10 Forward transfer admittance 1 0.5 0.3 -0.1 -0.3 -0.5 -1 -3 -5 Common source VDS = -10 V Pulse test -10 -30 -50 1 0.5 0.3 -0.1 -0.3 -0.5 -1 -3 -5 Common source Ta = 25C Pulse test -10 -30 -50 Drain current ID (A) Drain current ID (A) 4 2002-03-25 TPC8111 RDS (ON) - Ta 25 Common source 20 ID = -11 A, -5.5 A, -2.5 A Pulse test -100 -10 IDR - VDS -5 -3 -10 Drain-source ON resistance RDS (ON) (m) VGS = -4.5 V 10 ID = -11 A, -5.5 A, -2.5 A 5 -10 Drain reverse current 15 IDR (A) -1 -1 VGS = 0 V 0 -80 -40 0 40 80 120 160 -0.1 0 Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 50000 30000 -2.5 Vth - Ta Common source VDS = -10 V -2 ID = -1 mA Pulse test -1.5 (pF) 10000 5000 3000 Ciss Gate threshold voltage Vth (V) Capacitance C 1000 500 Coss Crss -1 Common source 300 VGS = 0 V f = 1 MHz Ta = 25C 100 -0.1 -0.3 -1 -0.5 -3 -10 -30 -100 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2.0 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s -30 Dynamic Input/Output Characteristics -12 (W) (V) 1.6 VDD = -24 V -12 VDS -12 -6 -8 VDD = -24 V -6 Common source VGS ID = -11 A Ta = 25C Pulse test -4 PD Drain-source voltage VDS -20 Drain power dissipation (2) 0.8 -15 -6 -10 0.4 -5 -2 0 0 25 50 75 100 125 150 175 0 0 20 40 60 80 100 120 0 140 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2002-03-25 Gate-source voltage 1.2 VGS (V) -25 -10 TPC8111 rth - tw 1000 Normalized transient thermal impedance rth (C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 t = 10 s (2) (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 100 ID max (pulse)* 1 ms* 10 10 ms* Drain current ID 1 0.1 *: Single pulse (A) Ta = 25C 0.01 0.01 Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2002-03-25 |
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